The intention of this table is to allow rough identification of a device's technology node.

This list includes ITRS standard nodes only, tag devices at the nearest appropriate node. Please only tag devices whose process geometry is known for certain; this will allow us to more easily compare examples of devices at each node.

Devices ≤ 90nm typically have thick top metal with a much larger design rule. There do not appear to be significant scaling trends in top metal pitch below 90nm,

There are two Vcore columns. The typical numbers are the nominal operating voltages for standard process, the minimum numbers are the lowest voltages allowed for low-power versions of the process.

Typically devices >180 nm are entirely Al metallization, <130 are Cu except for long-haul power routing. 130-180 can be either.

Node	Vcore (min)	Vcore(typ)	Layer count	Mz pitch	M1 pitch	SRAM (8T)	SRAM (6T)	Notes
Unknown		N/A	N/A
Huge (>10 µm)		>= 5
10 µm
3 µm
1500 nm
1000 nm	2.5	3.3 - 5.0	2
800 nm	2.5	5.0	2
600 nm		5.0	2 - 3
350 nm	2.0	3.3 - 5	3 - 5	1700 nm	1525 nm		46.17 µm2	EPM3064A, PIC12F683
250 / 220 nm		1.8 - 3.3	4 - 5
180 / 150 nm		1.5 - 1.8	4 - 6	1000 - 1550 nm	565 nm		4.15 µm2	XC2C32A, KSZ9021RN, PIC32MX340F512H
130 / 110 nm		1.5 - 1.8	5 - 8	3200 nm			2.91 µm2	CY8C4245AXI
90 nm	1.14	1.2	7 - 10	15000 nm		3.92 µm2	0.86 - 1.04 µm2	XC3S50A block RAM (8T), config cells (large 6T) ChipWorks TSMC 28 nm (dense 6T)
65 nm	0.95	1.0 - 1.2	9 - 12	14500 - 31500 nm				AM1707, BFSC100F144
45 / 40 nm	0.95	0.9 - 1.2	6 - 11	7100 nm		1.38 µm2		XC6SLX4
32 / 28 nm	0.92	0.85 - 1.05	11 - 12				0.16 µm2	ChipWorks TSMC 28 nm
22 / 20 nm	0.87	0.9 - 0.95	9 - 15
16 / 14 nm	0.72	0.85	13 + MiM		54 nm		0.058 µm2	ChipWorks Intel 14nm