The intention of this table is to allow rough identification of a device's technology node.

This list includes ITRS standard nodes only, tag devices at the nearest appropriate node. Please only tag devices whose process geometry is known for certain; this will allow us to more easily compare examples of devices at each node.

Devices ≤ 90nm typically have thick top metal with a much larger design rule. There do not appear to be significant scaling trends in top metal pitch below 90nm,

There are two Vcore columns. The typical numbers are the nominal operating voltages for standard process, the minimum numbers are the lowest voltages allowed for low-power versions of the process.

Typically devices >180 nm are entirely Al metallization, <130 are Cu except for long-haul power routing. 130-180 can be either.

Node Vcore (min) Vcore(typ) Layer count Mz pitch M1 pitch SRAM (8T) SRAM (6T) Notes
Unknown N/A N/A
Huge (>10 µm) >= 5 FIXME
10 µm FIXME FIXME
3 µm FIXME FIXME
1500 nm FIXME FIXME
1000 nm 2.5 3.3 - 5.0 2
800 nm 2.5 5.0 2
600 nm 5.0 2 - 3
350 nm 2.0 3.3 - 5 3 - 5 1700 nm 1525 nm 46.17 µm2 EPM3064A, PIC12F683
250 / 220 nm 1.8 - 3.3 4 - 5
180 / 150 nm 1.5 - 1.8 4 - 6 1000 - 1550 nm 565 nm 4.15 µm2 XC2C32A, KSZ9021RN, PIC32MX340F512H
130 / 110 nm 1.5 - 1.8 5 - 8 3200 nm 2.91 µm2CY8C4245AXI
90 nm 1.14 1.2 7 - 10 15000 nm 3.92 µm2 0.86 - 1.04 µm2 XC3S50A block RAM (8T), config cells (large 6T)
ChipWorks TSMC 28 nm (dense 6T)
65 nm 0.95 1.0 - 1.2 9 - 12 14500 - 31500 nm AM1707, BFSC100F144
45 / 40 nm 0.95 0.9 - 1.2 6 - 11 7100 nm 1.38 µm2 XC6SLX4
32 / 28 nm 0.92 0.85 - 1.05 11 - 12 0.16 µm2 ChipWorks TSMC 28 nm
22 / 20 nm 0.87 0.9 - 0.95 9 - 15
16 / 14 nm 0.72 0.85 13 + MiM 54 nm 0.058 µm2 ChipWorks Intel 14nm


 
tech/start.txt · Last modified: 2016/05/05 19:37 by azonenberg
 
Except where otherwise noted, content on this wiki is licensed under the following license: CC Attribution 4.0 International
Recent changes RSS feed Donate Powered by PHP Valid XHTML 1.0 Valid CSS Driven by DokuWiki