TODO: move this to individual vendors if it becomes comprehensive enough

AD

Ceramic

Based off of data from Materials Declaration of 8L CerDIP: http://www.analog.com/static/imported-files/packages/39260738806786CerDIP_8.pdf

Assembly Component Material % component % Assembly % % package
Base Ceramics Al2O3 62.11 20.36
MnO2 2.38 0.78
SiO2 2.02 0.66
TiO2 1.28 0.42
Cr2O3 1.01 0.33
Fe2O3 0.82 0.27
MgO 0.37 0.12
CaO 0.03 0.01
Co3O4 0.18 0.06
Sealing glass PbO 13.28 4.35
SnO2 3.48 1.14
SiO2 1.56 0.51
B2O3 8.12 2.66
Al2O3 0.92 0.30
TiO2 1.28 0.42
MgO 0.46 0.15
ZnO 0.18 0.06
CaO 0.46 0.15
Cr2O3 0.03 0.009
Fe2O3 0.03 0.009
MnO2 0.009 0.003
Na2O 0.002 0.0006
Lid Ceramics Al2O3 62.59 31.33
MnO2 2.40 1.20
SiO2 2.00 1.00
TiO2 1.30 0.65
Cr2O3 1.00 0.50
Fe2O3 0.80 0.40
Co3O4 0.20 0.10
MgO 0.40 0.20
CaO 0.03 0.02
Sealing glass PbO 17.90 8.96
SnO2 4.60 2.30
SiO2 2.20 1.10
B2O3 1.70 0.85
Al2O3 1.20 0.60
MgO 0.70 0.35
CaO 0.70 0.35
ZnO 0.20 0.10
Cr2O3 0.04 0.02
Fe2O3 0.04 0.02
MnO2 0.01 0.005
Misc Leadframe Fe 58.405 7.01
Ni 40.883 4.90
Mn 0.521 0.06
Si 0.130 0.02
Co 0.030 0.004
Cr 0.010 0.001
Al 0.010 0.001
S 0.006 0.0007
C 0.003 0.0004
P 0.002 0.0002
Paste Ag 80 0.80
Pb-borate glass 20 0.20
Chip Si 100 0.06
Bonding wires Al 100 0.10
Solder Sn 63 2.52
Pb 37 1.48

Altera

Cypress

32.45-lead Plastic Small Outline Package (SOIC)

http://smartdata.usbid.com/datasheets/usbid/2001/2001-q1/002605.pdf

  • Package Designation: S32456
  • Package Outline, Type, or Name: 32-lead Plastic Small Outline IC (SOIC)
  • Mold Compound Name/Manufacturer: NITTO MP8000CH4-A2
  • Mold Compound Flammability Rating: V-O per UL94
  • Oxygen Rating Index: >28%
  • Lead Frame Designation: S
  • Lead Frame Material: Copper
  • Lead Finish, Composition / Thickness: Solder Plated 85%Sn - 15% Pb)
  • Die Backside Preparation Method/Metallization: N/A
  • Die Separation Method: Wafer Saw
  • Die Attach Supplier: Ablestik
  • Die Attach Material: Ablestik 8361H
  • Bond Diagram Designation 10-03242
  • Wire Bond Method: Gold Wire Bonding
  • Wire Material/Size: Gold/ 1.30mil
  • Thermal Resistance Theta JA °C/W: 56
  • Package Cross Section Yes/No: N/A
  • Assembly Process Flow: 11-21000M
  • Name/Location of Assembly (prime) facility: Cypress Philipines (CSPI-R)

Fox

XpressO 3.2x2.5mm Ceramic

Based off of data from http://www.foxonline.com/pdfs/materialdeclarations/XpressO%203225%20Materials.pdf

Assembly Component Material % component % package
Cover Kovar Ni 3.70
Co 2.16
Fe 6.80
Ni plating Ni 0.73
P 0.08
Base Ceramic Al2O3 90.13 11.69
SiO2 6.40 6.40
0.45 3.47 3.47
Total 100.0 12.97
Metalization W 8.07
Mo 0.42
Ni plating Ni 42.47 0.31
Co 57.53 0.42
Au plating Au 100 0.75
Seal ring Fe 6.74
Ni 3.62
Co 2.12
Ag solder Ag 2.41
Cu 0.42
IC IC Al 0.125
Si 1.919
Au Au 0.333
Adhesive Ag 0.708
Phenolic resin 0.062
Epoxy resin 0.062
Crystal Crystal SiO2 2.91
Electrode Ag 0.0491
Cr 0.0008
Adhesive Ag 0.083240
Si 0.016648

HANA Microelectronics group

http://www.hanagroup.com/pkg_ayt/bom.pdf

Sample of packages to include all epoxy and die attach materials

Package Green? (ie RHoS) Die attach (conductive) Die attach (non-conductive) Mold compound
PDIP N 84-1LMISR4 843J EME6300HR, EME6600CR
PDIP Y 2200D 2200D G600
SOIC N 84-1LMISR4 843J MP8000AN/CH
SOIC Y 2200D 2200D G600
MSOP N 84-1LMISR4 843J MP8000AN/CH4
MSOP Y 2200D 2200D G600
MSOP (clear) N N/A N/A MG97-8006A
SOT89 N 84-1LMISR4 843J MP8000AN/CH
SOT89 Y 2600AT 2600AT CEL9220HF10
SOT223 N 84-1LMISR4 843J MP8000CH
SOT223 Y 8290 8290 G600
SOT5x3 N N/A N/A MP8000AN
SOT5x3 Y 2200D LE5030 KMC3580P14F
LGA N 84-1LMISR4 843J N/A
LGA Y AB2033SC AB2033SC CEL9220HF13H
LGA N 84-1LMISR4 843J EME6710S

Maxim

Microchip

Mindspeed

http://www.mindspeed.com/assets/001/28XXX-PCN-002-A.pdf

Product change notification that describes switch from Skyworks to Amkor encapsulation provider.

Skyworks

http://www.skyworksinc.com/

Mindspeed product change note

  • Mold compound: Sumitomo 6650E
  • Die Attach: Ablestik 8361J
  • Lead Frame: Cu 194
  • Lead Coating: 85/15 Sn/Pb
  • Wire: 1.25 mil Au
  • Marking: Ink

Mindspeed product change note

  • Mold compound: Sumitomo 7351LS
  • Die Attach: CRM-M0209
  • Lead Frame: Cu 194
  • Lead Coating: 85/15 Sn/Pb
  • Wire: 1.25 mil Au
  • Marking: Ink

Amkor

Altera PROCESS CHANGE NOTIFICATION PCN0702 UPDATE

http://www.altera.com/literature/pcn/pcn0702.pdf

Package Mold material Site
PQFP Sumitomo EME 6300HJ Philippines
PQFP Sumitomo G700M Philippines
PDIP non-Pb free Sumitomo EME 6300H Philippines
PDIP non-Pb free Sumitomo G600 Philippines
PDIP Pb free DongJin DMC 2000HG Philippines
PDIP Pb free Sumitomo G600 Philippines
RQFP Sumitomo EME-6300H Korea
RQFP Nitto MP8000CH4 Korea
RQFP Sumitomo G700M Korea

Mindspeed product change note

http://www.mindspeed.com/assets/001/28XXX-PCN-002-A.pdf

Selected packages

80 pin PQFP

  • Mold compound: Nitto MP8000CH4
  • Die Attach: Ablestik 8361J
  • Lead Frame: Cu 194
  • Lead Coating: 85/15 Sn/Pb
  • Wire: 1.0 mil Au
  • Marking: Ink

128 pin LQFP

  • Mold compound: Sumitomo 7320CR
  • Die Attach: Ablestik 84-1 LMISR4
  • Lead Frame: Cu 194
  • Lead Coating: 85/15 Sn/Pb
  • Wire: 1.0 mil Au
  • Marking: Ink

128 pin LQFP

  • Mold compound: Sumitomo EME-G700L
  • Die Attach: Ablestik 3230
  • Lead Frame: Cu 194
  • Lead Coating: 85/15 Sn/Pb
  • Wire: 1.0 mil Au
  • Marking: Ink

ST

CerDIP

Based on ST chemical content of semiconductor packaging: http://uk.farnell.com/images/en_UK/rohs/pdf/st-chemicals.pdf, page 72

Component Overall material Material % component % package
Base Alumina Al2O3 30.85
SiO2 3.43
Cup Alumina Al2O3 30.85
SiO2 3.43
Leadframe Alloy 42 Fe 7.64
Ni 5.54
Sealing glass Silicates PbO 9.79
SiO2 1.57
Misc 7.11
Chip (doped Si) Si 0.44
Al 0.0026
Die bonding Ag glass Ag 0.048
Pb 0.003
Misc 0.009
Wires (Al) Al 0.04
Leadfinishing Sn Sn 0.30

PDIP (standard)

Based on ST chemical content of semiconductor packaging: http://uk.farnell.com/images/en_UK/rohs/pdf/st-chemicals.pdf, page 86

Component Overall material Material % component % package
LeadframeCu alloy, Ag plating Cu 27.40
Fe 0.65
P 0.028
Ag 0.028
Encapsulation Epoxy resin SiO2 49
Epoxy 19
Sb2O3 1.4
Br (TBBA) 0.7
Chip Doped Si Si 0.994
Al 0.006
Die bonding Glue Ag 0.038
Epoxy resin 0.013
Wires Au Au 0.15
Leadfinishing (Non-RoHS?) Sn/PbSn 0.42
Pb 0.28
Leadfinishing (RoHS?)Sn Sn 0.7

PDIP (power)

Based on ST chemical content of semiconductor packaging: http://uk.farnell.com/images/en_UK/rohs/pdf/st-chemicals.pdf, page 88. This is similiar to above except has heavier leadframe and solders the die to the leadframe instead of gluing for better thermal conductivity

Component Overall material Material % component % package
LeadframeCu alloy, Ag plating Cu 45.53
Fe 1.07
P 0.047
Ag 0.047
Encapsulation Epoxy resin SiO2 35.70
Epoxy 13.77
Sb2O3 1.02
Br (TBBA) 0.51
Chip Doped Si Si 0.994
Al 0.006
Die bonding Soft solder Pb 0.300
Sn 0.016
Ag 0.0048
Wires Au Au 0.25
Leadfinishing (Non-RoHS?) Sn/PbSn 0.62
Pb 0.11
Leadfinishing (RoHS?)Sn Sn 0.73

Xilinx

 
package/materials.txt · Last modified: 2015/01/04 17:50 (external edit)
 
Except where otherwise noted, content on this wiki is licensed under the following license: CC Attribution 4.0 International
Recent changes RSS feed Donate Powered by PHP Valid XHTML 1.0 Valid CSS Driven by DokuWiki