Differences
This shows you the differences between two versions of the page.
Both sides previous revisionPrevious revisionNext revision | Previous revisionNext revisionBoth sides next revision |
resistor [2012/07/01 22:04] – mcmaster | resistor [2012/07/01 22:07] – mcmaster |
---|
====== Always on transistor ====== | ====== Depletion load ====== |
| |
These are arranged with the transistor tied to be always on. A MOSFET is classified into 3 areas of operation: | These are arranged with the transistor tied to be always on. A MOSFET is classified into 3 areas of operation: |
{{:mcmaster:resistor:pmos_pulldown_sch.png}} | {{:mcmaster:resistor:pmos_pulldown_sch.png}} |
| |
(FIXME: look into analysis. The metal is VDD (-10V). For PMOS, cutoff occurs when VGS > Vth and assume Vth = -3V or something like that. If VGS is 0 the resistor does nothing as there is no potential difference. Now note that since VG = VD and so VGS = VDS. We are in the triode region if VDS > VGS - Vth and so if 0 > 0 - -3V or 0 > 3V) | (FIXME: compare with analysis at [NMOS logic design] The metal is VDD (-10V). For PMOS, cutoff occurs when VGS > Vth and assume Vth = -3V or something like that. If VGS is 0 the resistor does nothing as there is no potential difference. Now note that since VG = VD and so VGS = VDS. We are in the triode region if VDS > VGS - Vth and so if 0 > 0 - -3V or 0 > 3V) |
| |
| |