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delayer:start [2013/04/23 06:23] – mcmasterdelayer:start [2025/08/04 21:23] (current) – external edit 127.0.0.1
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 Beck defines "lift off" as "total removal of all layers down to the substrate". It doesn't seem this is a widely used term but is the only term that we can find for this process. Lift off is important for crystallographic etching. One reason for its lack of popularity might be that the semiconductor field usually refers to lift off as a fabrication technique (see for example http://www.springerlink.com/content/j25g014709338534/#section=85698&page=1). Beck defines "lift off" as "total removal of all layers down to the substrate". It doesn't seem this is a widely used term but is the only term that we can find for this process. Lift off is important for crystallographic etching. One reason for its lack of popularity might be that the semiconductor field usually refers to lift off as a fabrication technique (see for example http://www.springerlink.com/content/j25g014709338534/#section=85698&page=1).
 +
 +
 +====== A. Zonenberg etch rate measurement ======
 +
 +FIXME: move this somewhere better
 +
 +Copper etch - 70 ml 3% H2O2 + 10 ml conc. HCl. Heat to 70C, agitate with magnetic stirrer.
 +
 +Test sample was Altera Stratix IV. Silver or tin plated copper. Plating was gone after <1 min in etchant, metallurgy of the plating was not studied. 20 minutes of etching = 0.13mm removal so 6.5 um/min. This number is likely +/- 30% or so because the temperature of the solution slowly increased over the etch period.
  
 ====== References ======  ====== References ====== 
delayer/start.1366698180.txt.gz · Last modified: 2013/10/20 14:59 (external edit)