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A foundry is an IC fabrication facility.
austriamicrosystems (AMS)
Processes
C18 @ 0.18 µm
H18 @ 0.18 µm
C35B4C3 @ 0.35 µm
C35B4M3 @ 0.35 µm
C35B4O1 @ 0.35 µm
H35B4D3 @ 0.35 µm
S35D4 @ 0.35 µm
BAE Systems
BAE Systems Information and Electronic Systems Integration, Inc. (Manassas, VA)
BAE Systems Micrwave Electronics Center Nashua (Nashua, NH)
Chartered Semiconductor Manufacturing (CSM)
Acquired by Global Foundries in 2010
0.13 µm
300 mm wafers
Dongbu
90 nm to 0.35 um
“Dongby HiTek's broad and deep semiconductor expertise encompasses High Voltage (HV), Application-Specific Integrated Circuit (ASIC), CMOS Image Sensor (CIS), Digital Signal Processor (DSP), Microcontroller Unit (MCU), and Non-Volatile Memory (e-Flash) devices.”
GlobalFoundries
Processes
28nm
40nm
65nm
0.13um/0.11um
0.18um
0.35um
Fab 1 - Dresden, Germany
“45nm and below”
300 mm wafer
Fab 2 - Singapore
0.6- to 0.35-micron
200 mm wafer
Fab 3/5 - Singapore
Fab 3E - Singapore
Fab 6 - Singapore
0.18- to 0.11-micron
200 mm wafer
Fab 7 - Singapore
Fab 8 - Saratoga County, NY
Grace Semiconductor
Processes
0.25 um
0.18 um
0.16 um
0.15 um
0.14 um
0.13 um
0.115 um
He Jian Technology Corporation (HJTC)
Processes
0.18 um
0.25 um
0.35 um
8“ and 200 mm wafers
Honeywell
Honeywell Aerospace Plymouth (Plymouth, MN)
HRL Labratories LLC
Malibu, CA
IBM
Intersil Corporation
MagnaChip
Processes
0.5 um
0.35 um
0.30 / 0.25 um
0.18 / 0.16 um
0.15 um
0.13 / 0.11 um
90 nm
National Semiconducdtor Corporation
South Portland, ME
0.65 um to 0.13 um
CMOS and BiCMOS with SOI, SiGe, and Hi Voltage
Ability to add unique number generator to ID individual dies: 256 bit
NEC
Shanghai Hua Hong NEC Electronics Company, Ltd.
1 um
0.5 um
0.45 um
0.35 um
0.3 um
0.25 um
0.18 um
0.162 um
0.16 um
0.13 um
Silterra Malaysia Sdn. Bhd.
Semiconductor Manufacturing International Corporation (SMIC)
Processes
Foundries
300mm wafer fabrication facility (fab) and three 200mm wafer fabs in its Shanghai (Mega-fab)
Two 300mm wafer fabs in its Beijing (Mega-fab)
200mm wafer fab in Tianjin
200mm wafer fab under construction in Shenzhen
200mm wafer fab in Chengdu owned by Cension Semiconductor Manufacturing Corporation and managed and operated by SMIC
300mm wafer fab in Wuhan owned by Wuhan Xinxin Semiconductor Manufacturing Corporation and managed and operated by SMIC
SSMC
0.25 um - 0.14 um
200 mm and 300 mm wafers
Northrup Gruman
Nortrup Grumman Electronic Systems (Blatimore, MD)
Northrup Grumman Space Technology (Redondo Beach, CA)
ON Semiconductor
Processes
I3T25 @ 0.35 µm
I3T50 @ 0.35 µm
I3T80 @ 0.35 µm
C5F/C5N @ 0.50 µm
I2T100 @ 0.70 µm
I2T30 @ 0.70 µm
Peregrine
Processes
GA @ 0.25 µm
GC @ 0.25 µm
FA @ 0.50 µm
FC @ 0.50 µm
Rayethon RF Components
SAMSUN Semiconductor
Processes
90 nm
65 nm
45 nm
45/40nm
32/28nm
300 mm wafers
Sarnoff Corporation
Semiconductor Manufacturing International Corporation (SMIC)
Taiwan Semiconductor Manufacturing Company Limited (TSMC)
Produces ICs for many third parties include such large organizations as nVidia.
TODO: image some nVidia chips to see if we can capture some identifying marks.
Processes
CLN40/CMN40 @ 40 nm
CLN45/CMN45 @ 45 nm
CLN65/CMN65 @ 65 nm
CLN90/CMN90 @ 90 nm
CL013/CM013 @ 0.13 µm
CL013LP @ 0.13 µm
CL013LV @ 0.13 µm
CL018/CM018 @ 0.18 µm
CL018HV @ 0.18 µm
CL018LP @ 0.18 µm
CL018LV @ 0.18 µm
CL025/CM025 @ 0.25 µm
CL035/CM035 @ 0.35 µm
CL035HV_BCD @ 0.35 µm
CL035HV_DDD @ 0.35 µm
“65 nm, 90 nm, 0.13um, 0.15 / 0.18 µm, 0.22 / 0.25µm, 0.30 / 0.35µm, 0.5 µm”
Texas Instruments (TI)
Processes
32 nm
45 nm
90 nm
130 nm
200 mm wafers
TowerJazz
Israel: 6” and 8”
US: 8”
China “manufacturing partnerships”
“silicon germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS), silicon BiCMOS, digital CMOS, analog CMOS and RF CMOS technologies”
TriQuint Semiconductor
TriQuint Semiconductor Texas (Richardson, TX)
United Microelectronic Corporation (UMC)
Processes
28 nm
40 nm
65 nm
90 nm
0.13 um
0.15 um
0.18 um
0.25 um
0.35 um
0.5 um
0.6 um
8” wafers
Vanguard International Semiconductor Corporation (VIS)
0.18um to 0.5um
8“ wafers
X-FAB Semiconductor Foundries
“CMOS; 1.0 - 0.18 µm modular mixed-signal CMOS technologies. BiCMOS; 0.6 µm technology. SOI-CMOS; 0.6 µm & 1.0 µm CMOS and BCD technology on SOI substrates. MEMS Technologies. CUSP”
References
