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10/100/1000 Ethernet PHY. Process tech looks to be around 180nm with at least five metal layers.
UPDATE: Confirmed by IBIS model (http://www.micrel.com/_Models/IBIS/KSZ9021RN/k9021rn.ibs) to be 150nm TSMC.
Full datasheet from TMSC for the particular I/O cells in use: http://www-afs.secure-endpoints.com/afs/ece/u/blevine/TSMC_IO.pdf
Package
56-pin QFN
Die
Edge of test pattern in scribe line. Looks like dimensions, possible indicator of 180nm tech? The numbers could be transistor W/L.
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