Differences

This shows you the differences between two versions of the page.

--- infosecdj:st:st1305b [2025/05/09 08:21] – infosecdj
+++ infosecdj:st:st1305b [2025/05/09 12:12] (current) – infosecdj
@@ Line 1: / Line 1: @@
 {{tag>collection_infosecdj vendor_st type_unknown year_1991 foundry_unknown tech_1500nm}}
-A small EEPROM memory card. Has 192 bits on the die. Fabbed at the ST fab in Rousset, FR using the 1500nm tech node.
+A small EEPROM memory card with "Secure Logic Access Control". Has 192 bits on the die. Fabbed at the ST fab in Rousset, FR using the 1500nm CMOS tech node.
+Datasheet: https://www.alldatasheet.com/datasheet-pdf/pdf/22202/STMICROELECTRONICS/ST1305B.html
 ====== Die ======
+Die size: 1.40x1.18 mm approx.
+Bonding pad opening: 128.2 um, square.
+Metal pitch: 4 um.
+Poly pitch: 3.75 um min / 4.5 um typ.
+Poly width: 1.5 um min.
+Text features on the die:
 <code>
@@ Line 25: / Line 39: @@
   * [[https://siliconpr0n.org/map/st/st1305b/single/st_st1305b_infosecdj_mz_nikpa40x.jpg|Single]] (18105x15167, 62.7491MiB)
+{{https://siliconpr0n.org/map/st/st1305b/single/st_st1305b_infosecdj_mz_nikpa40x_poly.thumb.jpg}}
+[[https://siliconpr0n.org/map/st/st1305b/infosecdj_mz_nikpa40x_poly/|Poly+diffusuon imaged under Nikon PlanApo 40x/1.0 oil]]
+  * [[https://siliconpr0n.org/map/st/st1305b/single/st_st1305b_infosecdj_mz_nikpa40x_poly.jpg|Single]] (18131x15199, 51.6819MiB)