Differences

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+{{tag>foundry}}
+United Microelectronic Corporation (UMC)
+====== Fabs ======
+====== Processes ======
+  * 28 nm
+  * 40 nm
+  * 65 nm
+  * 90 nm
+  * 0.13 um
+  * 0.15 um
+  * 0.18 um
+  * 0.25 um
+  * 0.35 um
+  * 0.5 um
+  * 0.6 um
+  * 8" wafers
+===== 90 nm =====
+==== General characteristics ====
+Mostly copper with thick aluminum on the top layer.
+==== Identification ====
+==== Devices ====
+{{topic>foundry_umc +tech_90nm}}
+===== 180 nm =====
+==== General characteristics ====
+.8V core with I/O up to 3.3V. Many mixed-signal devices will have an on-die LDO for generating 1.8 from 3.3 however higher end devices such as programmable logic typically expect an external 1.8V supply.
+-5 aluminum layers with tungsten vias, titanium-based barrier metal, and cobalt silicide contacts.
+Partial design rules and FIB sections at http://siliconexposed.blogspot.com/2014/02/process-overview-umc-180nm-envm.html
+Power ring and pad layouts can vary somewhat, as does presence or absence of CMP filler between bond pads.
+On-die Flash/EEPROM option available.
+==== Identification ====
+The CMP filler pattern is distinctive and can be used as positive ID. Fill polygons are rectangles with 2:1 aspect ratio, long side oriented parallel to the prevailing routing direction.
+CMP fill pattern table (measured from XC2C32A)
+^ Layer ^ Width ^ Height ^ X pitch (μm) ^ Y pitch (μm) ^ Conditions |
+^ M4    | 3375  | 6140   | 3975         | 6975         | Overglass  |
+^ M4    | 1875  | 4875   | 3915         | 6870         | Bare metal |
+^ M3    | 3000  |  825   | 3870         | 1960         | With overglass removed, M4 present |
+^ M3    | 3075  | 1125   | 3952         | 1995         | With M3 removed |
+==== Devices ====
+{{topic>foundry_umc +tech_180nm}}
+====== Devices ======
+{{topic>foundry_umc}}