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foundry:umc [2013/12/27 23:44] azonenberg created |
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* 8" wafers | * 8" wafers | ||
+ | ===== 90 nm ===== | ||
+ | |||
+ | ==== General characteristics ==== | ||
+ | |||
+ | Mostly copper with thick aluminum on the top layer. | ||
+ | |||
+ | ==== Identification ==== | ||
+ | |||
+ | ==== Devices ==== | ||
+ | |||
+ | {{topic> | ||
+ | ===== 180 nm ===== | ||
+ | |||
+ | ==== General characteristics ==== | ||
+ | |||
+ | 1.8V core with I/O up to 3.3V. Many mixed-signal devices will have an on-die LDO for generating 1.8 from 3.3 however higher end devices such as programmable logic typically expect an external 1.8V supply. | ||
+ | |||
+ | 4-5 aluminum layers with tungsten vias, titanium-based barrier metal, and cobalt silicide contacts. | ||
+ | |||
+ | Partial design rules and FIB sections at http:// | ||
+ | |||
+ | Power ring and pad layouts can vary somewhat, as does presence or absence of CMP filler between bond pads. | ||
+ | |||
+ | On-die Flash/ | ||
+ | ==== Identification ==== | ||
+ | |||
+ | The CMP filler pattern is distinctive and can be used as positive ID. Fill polygons are rectangles with 2:1 aspect ratio, long side oriented parallel to the prevailing routing direction. | ||
+ | |||
+ | CMP fill pattern table (measured from XC2C32A) | ||
+ | |||
+ | ^ Layer ^ Width ^ Height ^ X pitch (μm) ^ Y pitch (μm) ^ Conditions | | ||
+ | ^ M4 | 3375 | 6140 | 3975 | 6975 | Overglass | ||
+ | ^ M4 | 1875 | 4875 | 3915 | 6870 | Bare metal | | ||
+ | ^ M3 | 3000 | 825 | 3870 | 1960 | With overglass removed, M4 present | | ||
+ | ^ M3 | 3075 | 1125 | 3952 | 1995 | With M3 removed | | ||
+ | |||
+ | ==== Devices ==== | ||
+ | |||
+ | {{topic> | ||
====== Devices ====== | ====== Devices ====== | ||
{{topic> | {{topic> |