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foundry:umc [2013/12/27 23:44]
azonenberg created
foundry:umc [2015/01/04 22:50] (current)
Line 20: Line 20:
   * 8" wafers   * 8" wafers
  
 +===== 90 nm =====
 +
 +==== General characteristics ====
 +
 +Mostly copper with thick aluminum on the top layer.
 +
 +==== Identification ====
 +
 +==== Devices ====
 +
 +{{topic>foundry_umc +tech_90nm}}
 +===== 180 nm =====
 +
 +==== General characteristics ====
 +
 +1.8V core with I/O up to 3.3V. Many mixed-signal devices will have an on-die LDO for generating 1.8 from 3.3 however higher end devices such as programmable logic typically expect an external 1.8V supply.
 +
 +4-5 aluminum layers with tungsten vias, titanium-based barrier metal, and cobalt silicide contacts.
 +
 +Partial design rules and FIB sections at http://siliconexposed.blogspot.com/2014/02/process-overview-umc-180nm-envm.html
 +
 +Power ring and pad layouts can vary somewhat, as does presence or absence of CMP filler between bond pads.
 +
 +On-die Flash/EEPROM option available.
 +==== Identification ====
 +
 +The CMP filler pattern is distinctive and can be used as positive ID. Fill polygons are rectangles with 2:1 aspect ratio, long side oriented parallel to the prevailing routing direction.
 +
 +CMP fill pattern table (measured from XC2C32A)
 +
 +^ Layer ^ Width ^ Height ^ X pitch (μm) ^ Y pitch (μm) ^ Conditions |
 +^ M4    | 3375  | 6140   | 3975         | 6975         | Overglass  |
 +^ M4    | 1875  | 4875   | 3915         | 6870         | Bare metal |
 +^ M3    | 3000  |  825   | 3870         | 1960         | With overglass removed, M4 present |
 +^ M3    | 3075  | 1125   | 3952         | 1995         | With M3 removed |
 +
 +==== Devices ====
 +
 +{{topic>foundry_umc +tech_180nm}}
 ====== Devices ====== ====== Devices ======
  
 {{topic>foundry_umc}} {{topic>foundry_umc}}
 
foundry/umc.1388187843.txt.gz · Last modified: 2013/12/27 23:44 by azonenberg
 
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