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foundry:start [2013/12/27 23:48] azonenberg |
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A foundry is an IC fabrication facility. | A foundry is an IC fabrication facility. | ||
- | ====== | + | ====== |
- | Processes | + | {{topic>foundry}} |
- | C18 @ 0.18 µm | + | |
- | H18 @ 0.18 µm | + | |
- | C35B4C3 @ 0.35 µm | + | |
- | C35B4M3 @ 0.35 µm | + | |
- | C35B4O1 @ 0.35 µm | + | |
- | H35B4D3 @ 0.35 µm | + | |
- | S35D4 @ 0.35 µm | + | |
- | + | ||
- | ====== BAE Systems ====== | + | |
- | + | ||
- | BAE Systems Information and Electronic Systems Integration, | + | |
- | BAE Systems Micrwave Electronics Center Nashua (Nashua, NH) | + | |
- | + | ||
- | ====== Chartered Semiconductor Manufacturing (CSM) ====== | + | |
- | + | ||
- | Acquired by Global Foundries in 2010 | + | |
- | 0.13 µm | + | |
- | 300 mm wafers | + | |
- | + | ||
- | Dongbu | + | |
- | 90 nm to 0.35 um | + | |
- | " | + | |
- | + | ||
- | ====== GlobalFoundries ====== | + | |
- | + | ||
- | Processes | + | |
- | * 28nm | + | |
- | * 40nm | + | |
- | * 65nm | + | |
- | * 0.13um/ | + | |
- | * 0.18um | + | |
- | * 0.35um | + | |
- | + | ||
- | ===== Fab 1 - Dresden, Germany ===== | + | |
- | + | ||
- | * "45nm and below" | + | |
- | * 300 mm wafer | + | |
- | + | ||
- | ===== Fab 2 - Singapore ===== | + | |
- | + | ||
- | * 0.6- to 0.35-micron | + | |
- | * 200 mm wafer | + | |
- | + | ||
- | ===== Fab 3/5 - Singapore ===== | + | |
- | + | ||
- | * 0.35-micron to 0.18-micron | + | |
- | * 200 mm wafer | + | |
- | + | ||
- | + | ||
- | ===== Fab 3E - Singapore ===== | + | |
- | + | ||
- | * 0.18-micron | + | |
- | * 200 mm wafer | + | |
- | + | ||
- | ===== Fab 6 - Singapore ===== | + | |
- | + | ||
- | * 0.18- to 0.11-micron | + | |
- | * 200 mm wafer | + | |
- | + | ||
- | ===== Fab 7 - Singapore ===== | + | |
- | + | ||
- | 0.13-micron to 40nm | + | |
- | + | ||
- | ===== Fab 8 - Saratoga County, NY ===== | + | |
- | + | ||
- | 28nm and below | + | |
- | + | ||
- | ====== Grace Semiconductor ====== | + | |
- | + | ||
- | Processes | + | |
- | * 0.25 um | + | |
- | * 0.18 um | + | |
- | * 0.16 um | + | |
- | * 0.15 um | + | |
- | * 0.14 um | + | |
- | * 0.13 um | + | |
- | * 0.115 um | + | |
- | + | ||
- | ====== He Jian Technology Corporation (HJTC) ====== | + | |
- | + | ||
- | Processes | + | |
- | * 0.18 um | + | |
- | * 0.25 um | + | |
- | * 0.35 um | + | |
- | * 8" and 200 mm wafers | + | |
- | + | ||
- | ====== Honeywell ====== | + | |
- | + | ||
- | Honeywell Aerospace Plymouth (Plymouth, MN) | + | |
- | + | ||
- | HRL Labratories LLC | + | |
- | + | ||
- | Malibu, CA | + | |
- | + | ||
- | ====== IBM ====== | + | |
- | + | ||
- | Main article | + | |
- | + | ||
- | ====== Intersil Corporation ====== | + | |
- | + | ||
- | Palm Bay. FL | + | |
- | + | ||
- | ====== MagnaChip ====== | + | |
- | + | ||
- | Processes | + | |
- | * 0.5 um | + | |
- | * 0.35 um | + | |
- | * 0.30 / 0.25 um | + | |
- | * 0.18 / 0.16 um | + | |
- | * 0.15 um | + | |
- | * 0.13 / 0.11 um | + | |
- | * 90 nm | + | |
- | + | ||
- | + | ||
- | ====== National Semiconducdtor Corporation ====== | + | |
- | + | ||
- | * South Portland, ME | + | |
- | * 0.65 um to 0.13 um | + | |
- | * CMOS and BiCMOS with SOI, SiGe, and Hi Voltage | + | |
- | * Ability to add unique number generator to ID individual dies: 256 bit | + | |
- | + | ||
- | ====== NEC ====== | + | |
- | + | ||
- | ===== Shanghai Hua Hong NEC Electronics Company, Ltd. ===== | + | |
- | + | ||
- | * 1 um | + | |
- | * 0.5 um | + | |
- | * 0.45 um | + | |
- | * 0.35 um | + | |
- | * 0.3 um | + | |
- | * 0.25 um | + | |
- | * 0.18 um | + | |
- | * 0.162 um | + | |
- | * 0.16 um | + | |
- | * 0.13 um | + | |
- | + | ||
- | ====== Silterra Malaysia Sdn. Bhd. ====== | + | |
- | + | ||
- | Processes | + | |
- | * 0.13µm | + | |
- | * 0.18µm | + | |
- | * 0.22µm | + | |
- | + | ||
- | ====== Semiconductor Manufacturing International Corporation (SMIC) ====== | + | |
- | + | ||
- | Processes | + | |
- | + | ||
- | * 350 nm to 45nm | + | |
- | + | ||
- | Foundries | + | |
- | + | ||
- | * 300mm wafer fabrication facility (fab) and three 200mm wafer fabs in its Shanghai (Mega-fab) | + | |
- | * Two 300mm wafer fabs in its Beijing (Mega-fab) | + | |
- | * 200mm wafer fab in Tianjin | + | |
- | * 200mm wafer fab under construction in Shenzhen | + | |
- | * 200mm wafer fab in Chengdu owned by Cension Semiconductor Manufacturing Corporation and managed and operated by SMIC | + | |
- | * 300mm wafer fab in Wuhan owned by Wuhan Xinxin Semiconductor Manufacturing Corporation and managed and operated by SMIC | + | |
- | + | ||
- | + | ||
- | + | ||
- | ====== SSMC ====== | + | |
- | + | ||
- | 0.25 um - 0.14 um | + | |
- | 200 mm and 300 mm wafers | + | |
- | + | ||
- | ====== Northrup Gruman ====== | + | |
- | + | ||
- | Nortrup Grumman Electronic Systems (Blatimore, MD) | + | |
- | Northrup Grumman Space Technology (Redondo Beach, CA) | + | |
- | + | ||
- | ====== ON Semiconductor ====== | + | |
- | + | ||
- | Processes | + | |
- | * I3T25 @ 0.35 µm | + | |
- | * I3T50 @ 0.35 µm | + | |
- | * I3T80 @ 0.35 µm | + | |
- | * C5F/C5N @ 0.50 µm | + | |
- | * I2T100 @ 0.70 µm | + | |
- | * I2T30 @ 0.70 µm | + | |
- | + | ||
- | ====== Peregrine ====== | + | |
- | + | ||
- | Processes | + | |
- | * GA @ 0.25 µm | + | |
- | * GC @ 0.25 µm | + | |
- | * FA @ 0.50 µm | + | |
- | * FC @ 0.50 µm | + | |
- | + | ||
- | ====== Rayethon RF Components ====== | + | |
- | + | ||
- | Andower, MA | + | |
- | + | ||
- | ====== SAMSUN Semiconductor ====== | + | |
- | + | ||
- | Processes | + | |
- | * 90 nm | + | |
- | * 65 nm | + | |
- | * 45 nm | + | |
- | * 45/40nm | + | |
- | * 32/28nm | + | |
- | + | ||
- | 300 mm wafers | + | |
- | + | ||
- | ====== Sarnoff Corporation ====== | + | |
- | + | ||
- | Princeton, NJ | + | |
- | + | ||
- | ====== Semiconductor Manufacturing International Corporation (SMIC) ====== | + | |
- | + | ||
- | 0.35 um to 90nm | + | |
- | + | ||
- | ====== Taiwan Semiconductor Manufacturing Company Limited (TSMC) ====== | + | |
- | + | ||
- | Produces ICs for many third parties include such large organizations as nVidia. | + | |
- | TODO: image some nVidia chips to see if we can capture some identifying marks. | + | |
- | Processes | + | |
- | * CLN40/CMN40 @ 40 nm | + | |
- | * CLN45/CMN45 @ 45 nm | + | |
- | * CLN65/CMN65 @ 65 nm | + | |
- | * CLN90/CMN90 @ 90 nm | + | |
- | * CL013/CM013 @ 0.13 µm | + | |
- | * CL013LP @ 0.13 µm | + | |
- | * CL013LV @ 0.13 µm | + | |
- | * CL018/CM018 @ 0.18 µm | + | |
- | * CL018HV @ 0.18 µm | + | |
- | * CL018LP @ 0.18 µm | + | |
- | * CL018LV @ 0.18 µm | + | |
- | * CL025/CM025 @ 0.25 µm | + | |
- | * CL035/CM035 @ 0.35 µm | + | |
- | * CL035HV_BCD @ 0.35 µm | + | |
- | * CL035HV_DDD @ 0.35 µm | + | |
- | * "65 nm, 90 nm, 0.13um, 0.15 / 0.18 µm, 0.22 / 0.25µm, 0.30 / 0.35µm, 0.5 µm" | + | |
- | + | ||
- | {{topic>foundry_tsmc}} | + | |
- | + | ||
- | ====== Texas Instruments (TI) ====== | + | |
- | + | ||
- | Processes | + | |
- | * 32 nm | + | |
- | * 45 nm | + | |
- | * 90 nm | + | |
- | * 130 nm | + | |
- | * 200 mm wafers | + | |
- | + | ||
- | ====== TowerJazz ====== | + | |
- | + | ||
- | Israel: 6” and 8” | + | |
- | + | ||
- | US: 8” | + | |
- | + | ||
- | China " | + | |
- | + | ||
- | " | + | |
- | + | ||
- | ====== TriQuint Semiconductor ====== | + | |
- | + | ||
- | TriQuint Semiconductor Texas (Richardson, | + | |
- | + | ||
- | ====== United Microelectronic Corporation (UMC) ====== | + | |
- | + | ||
- | Processes | + | |
- | * 28 nm | + | |
- | * 40 nm | + | |
- | * 65 nm | + | |
- | * 90 nm | + | |
- | * 0.13 um | + | |
- | * 0.15 um | + | |
- | * 0.18 um | + | |
- | * 0.25 um | + | |
- | * 0.35 um | + | |
- | * 0.5 um | + | |
- | * 0.6 um | + | |
- | * 8" wafers | + | |
- | + | ||
- | {{topic> | + | |
- | + | ||
- | ====== Vanguard International Semiconductor Corporation (VIS) ====== | + | |
- | + | ||
- | 0.18um to 0.5um | + | |
- | + | ||
- | 8" wafers | + | |
- | + | ||
- | ====== X-FAB Semiconductor Foundries ====== | + | |
- | + | ||
- | "CMOS; 1.0 - 0.18 µm modular mixed-signal CMOS technologies. BiCMOS; 0.6 µm technology. SOI-CMOS; 0.6 µm & 1.0 µm CMOS and BCD technology on SOI substrates. MEMS Technologies. CUSP" | + | |
====== References ====== | ====== References ====== | ||
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- http:// | - http:// | ||
- http:// | - http:// | ||
- | - http:// | ||
- http:// | - http:// | ||
- | - http:// | ||