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| delayer:start [2012/02/21 01:47] – mcmaster | delayer:start [2018/02/28 06:55] (current) – mcmaster |
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| Techniques for getting to the various layers in a chip for imaging. Barring noninvasive methods like CT scan, any delayering procedure will involve removing parts of the chip and will render it permanently non-functional. | Delayering, also know as deprocessing, are techniques for getting to the various layers in a chip. Typically this is for imaging or microprobing but is also used to alter circuits or to prepare for fault injection. Barring noninvasive methods like CT scan, any delayering procedure will involve removing parts of the chip and will render it permanently non-functional. |
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| ====== Selectively ====== | ====== Selectively ====== |
| ====== Wet etching ====== | ====== Wet etching ====== |
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| Main article: [[Wet etching]] | Main article: [[wet]] |
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| ====== Abrasive ====== | ====== Abrasive ====== |
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| No CMP: | No CMP: |
| |{{gallery>image:sergei_p_skorobogatov_011_pic16f877_no_cmp.jpg| | |{{gallery>image:sergei_p_skorobogatov_011_pic16f877_no_cmp.jpg}}| |
| |Original caption: "Second metal layer and polysilicon layer can be seen through top metal layer on Microchip PIC16F877 microcontroller. 500× magnification." Copyright 2005 Sergei P. Skorobogatov, used with permission| | |Original caption: "Second metal layer and polysilicon layer can be seen through top metal layer on Microchip PIC16F877 microcontroller. 500× magnification." Copyright 2005 Sergei P. Skorobogatov, used with permission| |
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| CMP: | CMP: |
| |{{gallery>image:sergei_p_skorobogatov_012_pic16f877_cmp.jpg]]| | |{{gallery>image:sergei_p_skorobogatov_012_pic16f877_cmp.jpg}}| |
| |Original caption: "Nothing can be seen under the top metal layer on Microchip PIC16F877A microcontroller as the layers inside the chip were planarised during fabrication. 500× magnification." Copyright 2005 Sergei P. Skorobogatov, used with permission| | |Original caption: "Nothing can be seen under the top metal layer on Microchip PIC16F877A microcontroller as the layers inside the chip were planarised during fabrication. 500× magnification." Copyright 2005 Sergei P. Skorobogatov, used with permission| |
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| Beck defines "lift off" as "total removal of all layers down to the substrate". It doesn't seem this is a widely used term but is the only term that we can find for this process. Lift off is important for crystallographic etching. One reason for its lack of popularity might be that the semiconductor field usually refers to lift off as a fabrication technique (see for example http://www.springerlink.com/content/j25g014709338534/#section=85698&page=1). | Beck defines "lift off" as "total removal of all layers down to the substrate". It doesn't seem this is a widely used term but is the only term that we can find for this process. Lift off is important for crystallographic etching. One reason for its lack of popularity might be that the semiconductor field usually refers to lift off as a fabrication technique (see for example http://www.springerlink.com/content/j25g014709338534/#section=85698&page=1). |
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| | ====== A. Zonenberg etch rate measurement ====== |
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| | FIXME: move this somewhere better |
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| | Copper etch - 70 ml 3% H2O2 + 10 ml conc. HCl. Heat to 70C, agitate with magnetic stirrer. |
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| | Test sample was Altera Stratix IV. Silver or tin plated copper. Plating was gone after <1 min in etchant, metallurgy of the plating was not studied. 20 minutes of etching = 0.13mm removal so 6.5 um/min. This number is likely +/- 30% or so because the temperature of the solution slowly increased over the etch period. |
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| ====== References ====== | ====== References ====== |
