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conventions [2018/03/14 01:46] mcmaster [Technique] |
conventions [2023/05/04 16:41] (current) infosecdj [Objective] |
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| ====== Layer name ====== | ====== Layer name ====== | ||
| + | TLDR: | ||
| + | * An unprocessed chip has layer " | ||
| + | * For others, see below | ||
| + | |||
| + | mcmaster: | ||
| + | * I've been calling intermediate etchings in more complex processes like s3-7 meaning sample 3, processing step 7 | ||
| + | * This avoids spending too much time trying to classify something that isn't really a purely poly or active | ||
| + | |||
| + | Conventions: | ||
| * Active/ | * Active/ | ||
| * If bare silicon with no processing: //active// | * If bare silicon with no processing: //active// | ||
| Line 11: | Line 20: | ||
| * Metal layer | * Metal layer | ||
| * If the number of layers in the chip is known (from a cross section, etc): //mN//, where N starts from 1 at the lowest layer and counts up | * If the number of layers in the chip is known (from a cross section, etc): //mN//, where N starts from 1 at the lowest layer and counts up | ||
| - | * If the number of layers is not known: //mN//, where N starts from the letter | + | * If the number of layers is not known: //mN//, where N starts from the letter |
| ====== Image ====== | ====== Image ====== | ||
| Line 23: | Line 32: | ||
| Some sample image names: | Some sample image names: | ||
| * st_24c02_mz_ns50xu.jpg: | * st_24c02_mz_ns50xu.jpg: | ||
| - | * st_24c02_mz.jpg: | + | * st_24c02_mz.jpg: |
| + | * Complex example | ||
| + | * ti_tms32010c-70015_s1-2_mit20x_rom.jpg | ||
| + | * Vendor: Texas Instruments (ti) | ||
| + | * Chip: TMS32010C | ||
| + | * Chip variant: 70015 (in this case the ROM programming) | ||
| + | * s1-2: sample 1, processing step 2. Please list processing steps on wiki page if available | ||
| + | * mit20x: objective used | ||
| + | * rom: a region of interest within the 20x scan | ||
| + | * wafer example | ||
| + | * mos_8564r6-wafer_mz_die.jpg: | ||
| + | * mos_8564r6-wafer_mz_9079r2.jpg: | ||
| + | |||
| + | ===== Technique ===== | ||
| + | |||
| + | Abbreviated names for different microscope configurations | ||
| + | |||
| + | ^ Applies ^ Abbreviation ^ Name ^ Notes ^ | ||
| + | | OM | bf | Brightfield | Usually omitted / implied default | | ||
| + | | EM | bs | Backscatter | | | ||
| + | | OM | df | Darkfield | | | ||
| + | | OM | dic | Differential interference contrast | | | ||
| + | | EM | se | Secondary electron | | | ||
| + | | OM | xpol | Crossed polarizers | | | ||
| + | |||
| + | Where: | ||
| + | * EM: electron microscopy (SEM) | ||
| + | * OM: optical microscopy | ||
| ===== Optical ===== | ===== Optical ===== | ||
| Line 47: | Line 83: | ||
| * mit50xn: Mitutoyo M Plan Apo 50x Near UV | * mit50xn: Mitutoyo M Plan Apo 50x Near UV | ||
| * mit100x: Mitutoyo M Plan Apo 100x | * mit100x: Mitutoyo M Plan Apo 100x | ||
| + | * nikon20x: Nikon M Plan 20x ELWD | ||
| * neo5x: Olympus Neo 5x | * neo5x: Olympus Neo 5x | ||
| * nd5x: Olympus Neo DPlan 5x | * nd5x: Olympus Neo DPlan 5x | ||
| * ns50x: Olympus Neo SPlan 50x | * ns50x: Olympus Neo SPlan 50x | ||
| * ns50xu: Olympus Neo SPlan 50x ultra-long working distance (ULWD) | * ns50xu: Olympus Neo SPlan 50x ultra-long working distance (ULWD) | ||
| + | * ms20x: Olympus MSPlan 20x | ||
| * sz or zoom: Zoom microscope, generally no scale bar provided because magnification varies (unless that particular zoom setting was calibrated during the same imaging session) | * sz or zoom: Zoom microscope, generally no scale bar provided because magnification varies (unless that particular zoom setting was calibrated during the same imaging session) | ||
| - | |||
| - | Scales | ||
| - | |||
| - | ^ Scope ^ Objective | ||
| - | | pr0nscope | ||
| - | | pr0nscope | ||
| - | | pr0nscope | ||
| - | | pr0nscope | ||
| - | | pr0nscope | ||
| - | | pr0nscope | ||
| - | | pr0nscope | ||
| - | | pr0nscope | ||
| See also | See also | ||