This shows you the differences between two versions of the page.
Both sides previous revision Previous revision Next revision | Previous revision | ||
azonenberg:cypress:cy8c4245axi [2014/08/24 19:49] azonenberg [Active area] |
azonenberg:cypress:cy8c4245axi [2015/01/04 22:50] (current) |
||
---|---|---|---|
Line 1: | Line 1: | ||
- | {{tag> | + | {{tag> |
- | PSoC 4200 series device. | + | PSoC 4200 series device |
* Cortex-M0 CPU at up to 48 MHz | * Cortex-M0 CPU at up to 48 MHz | ||
Line 13: | Line 13: | ||
Looks like >= 4 metal layers (thick top metal, at least one vertical-horizontal routing pair, then M1). Full delayering and side-by-side comparison of the UDBs vs CoolRunner-2 architecture is pending. | Looks like >= 4 metal layers (thick top metal, at least one vertical-horizontal routing pair, then M1). Full delayering and side-by-side comparison of the UDBs vs CoolRunner-2 architecture is pending. | ||
+ | |||
+ | ====== Stackup from change notice 145273 (TODO: Measure against actual die) ====== | ||
+ | |||
+ | Ti/AlCu/TiW to Ti/ | ||
+ | |||
+ | * Metal 1: 150A Ti/250A TiN/3200A Al 0.5% Cu/90A Ti/500A TiN | ||
+ | * Metal 2: 150A Ti/250A TiN/3200A Al 0.5% Cu/90A Ti/500A TiN | ||
+ | * Metal 3: 500A TiW/21,250A Al 0.5% Cu/300A TiW | ||
+ | |||
+ | Passivation: | ||
+ | |||
+ | Gate stack: SiO2 / 110A & SiO2 / 32A | ||
====== Package ====== | ====== Package ====== |